Renesas Electronics Corporation 2SK3000ZY-90TL-E

The 2SK3000 is a silicon N-channel MOS FET designed for low-frequency power switching, housed in an MPAK package measuring 3.1 mm x 1.65 mm x 1.3 mm. It has a drain-to-source voltage rating of 40 V, a continuous drain current of 1.0 A, and a peak drain current of 4.0 A under pulse conditions. The device features a typical on-resistance of 0.16 Ω at VGS = 10 V and ID = 450 mA, with a gate drive voltage requirement of 4 V. It meets the AEC-Q200 automotive qualification standard and is RoHS compliant. The channel dissipation is rated at 400 mW, and the operating junction temperature ranges from -55°C to 150°C.