Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2796L-E 2SK2796L-E

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1159867-2SK2796L-E Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 20 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): 5 A
Request a Quote
Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1159867-2SK2796L-E Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 20 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): 5 A
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2796L-E - 1159867-2SK2796L-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2796L-E
1159867-2SK2796L-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2796L-E 1159867-2SK2796L-E
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1159867-2SK2796L-E Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 20 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): 5 A

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1159867-2SK2796L-E
Drain to Source Voltage (Vdss): 60 V
Number of Elements: 1
Power Dissipation: 20 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: DPAK
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Lead Free: Lead Free
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 5 A

Buy Now
Singapore
60V 5A DPAK MOSFET Transistor
285-2SK2796L-E
60V 5A DPAK MOSFET Transistor 285-2SK2796L-E
Trans MOSFET N-CH Si 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Product overview: 2SK2796L-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2796L-E can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH Si 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Product overview: 2SK2796L-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2796L-E can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1159867-2SK2796L-E 285-2SK2796L-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2796L-E 60V 5A DPAK MOSFET Transistor
PD 20000 milliwatts 20 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Dual N-Channel Matched MOSFET Pair - ALD1101BPAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 12 volts
View Details
3 suppliers
MOSFETs - 1826878 - RS Components, Ltd.
RS Components, Ltd.
Specs
MOSFET Operating Mode Enhancement
Package Type SOT26; Tsot-26
Number of units in IC 2
View Details
Silicon Carbide MOSFET Discretes - AIMW120R045M1 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
60 V, N-channel Trench MOSFET - 2N7002HWX - Nexperia B.V.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
View Details
5 suppliers