Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SK1947-E

The 2SK1947-E is a silicon N-channel MOSFET designed for high-speed power switching applications such as switching regulators and motor control. It is packaged in a TO-3PL case with a mass of 9.9 g. The device has a drain-to-source voltage rating of 250 V, a continuous drain current of 50 A, and a peak pulse drain current of 200 A. Its on-resistance is 0.047 Ω at 25 A and 10 V gate-source voltage. It features a built-in fast recovery diode with a reverse recovery time of 140 ns. The MOSFET meets RoHS standards and is rated for storage temperatures from -55°C to +150°C. It is classified as a "Standard" quality grade part by Renesas Electronics.