Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SK1637-E

The 2SK1637-E is a silicon N-channel MOSFET for high-speed power switching, housed in a TO-220FM package with dimensions of 10.0 mm length, 7.0 mm width, and 3.2 mm thickness, weighing 1.8 g. It has a drain-source voltage rating of 600 V, continuous drain current of 4 A, and peak pulsed drain current of 16 A. The device features a static drain-source on-state resistance of 1.8 to 2.4 Ω at 2 A and 10 V gate-source voltage, with a maximum channel dissipation of 35 W. It operates within a case temperature range of -55 to +150 °C, meets the RoHS directive, and is rated for standard quality applications. The device is certified for use in transportation, industrial, and consumer electronics under the 'Standard' quality grade.