Renesas Electronics Corporation 2SK1095-90-E

Silicon N-channel MOSFET for high-speed power switching in motor drive, DC-DC converter, and solenoid applications, housed in a TO-220FM package. It has a 60 V drain-to-source voltage rating, 25 A continuous drain current, and 100 A peak drain current. On-resistance is 0.033 to 0.06 Ω at 15 A and 4-10 V gate drive, compatible with 5 V drive sources. Maximum channel dissipation is 30 W with a 150 °C channel temperature limit. Switching times include 15 ns turn-on delay, 130 ns rise time, 270 ns turn-off delay, and 180 ns fall time. Input, output, and reverse transfer capacitances are 1400 pF, 720 pF, and 220 pF at 10 V and 1 MHz. Body diode forward voltage is 1.3 V with 135 ns reverse recovery time.