Renesas Electronics Corporation Bipolar RF Transistors 2SC5606-T1-A

NPN silicon RF transistor for low-noise, high-gain amplification in high-frequency applications, housed in a 3-pin ultra super minimold (19, 1608 PKG) package measuring 1.6 mm × 0.8 mm. It has a collector-to-emitter voltage rating of 3.3 V, a collector current of 35 mA, and a total power dissipation of 115 mW. The device features a gain-bandwidth product of 21 GHz at 20 mA and a noise figure of 1.2 dB at 5 mA and 2 GHz. It meets the RoHS standard and is rated for junction temperatures up to 150°C. Packaging is supplied as 3 kpcs per reel with pin 3 (collector) facing the tape perforation side.