Renesas Electronics Corporation 2SC4554(7)-S6-AZ

Description
Bipolar Power Transistors
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Description
Bipolar Power Transistors
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Datasheet
Datasheet Summary
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The 2SC4554 is an NPN silicon epitaxial power transistor designed for switching applications with low collector saturation voltage and high DC current gain. It features an on-chip collector-to-emitter damper diode and a molded package that does not require an insulating board. The transistor has a collector-to-emitter voltage rating of 100 V, a continuous collector current of ±15 A, and a maximum power dissipation of 35 W at 25°C case temperature. The junction temperature range is -55°C to +150°C. The DC current gain is 450 to 2000 at 5 A collector current, with a typical collector saturation voltage of 0.12 V at 5 A collector current and 50 mA base current. It is classified as a 'Standard' quality grade device for general industrial and consumer use.

Datasheet Summary
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The 2SC4554 is an NPN silicon epitaxial power transistor designed for switching applications with low collector saturation voltage and high DC current gain. It features an on-chip collector-to-emitter damper diode and a molded package that does not require an insulating board. The transistor has a collector-to-emitter voltage rating of 100 V, a continuous collector current of ±15 A, and a maximum power dissipation of 35 W at 25°C case temperature. The junction temperature range is -55°C to +150°C. The DC current gain is 450 to 2000 at 5 A collector current, with a typical collector saturation voltage of 0.12 V at 5 A collector current and 50 mA base current. It is classified as a 'Standard' quality grade device for general industrial and consumer use.

Suppliers

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Product
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Supplier Links
 - 2SC4554(7)-S6-AZ - Rochester Electronics
Newburyport, MA, United States
Bipolar Power Transistors

Bipolar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SC4554(7)-S6-AZ
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