Renesas Electronics Corporation 2SB1400-E#0205

PNP bipolar transistor for low-frequency power amplification, housed in a TO-220FM package, with a collector-to-base and collector-to-emitter breakdown voltage of -120 V, a collector current rating of -6 A, and a maximum collector power dissipation of 2 W at 25°C. Operating junction temperature ranges from -55°C to 150°C. DC current transfer ratio (hFE) ranges from 1000 to 20000 at -3 V and -3 A. Collector-to-emitter saturation voltage is up to -3.0 V at -6 A collector current and -60 mA base current.