The 2SA1741 is a PNP silicon epitaxial power transistor designed for high-speed switching applications such as DC/DC converters and actuators. It is packaged in a small resin-molded insulation type that eliminates the need for an insulating board or bushing during mounting. The device has a collector-to-emitter voltage rating of -60 V, a collector current rating of -5.0 A (DC) and -10 A (pulse), and a total power dissipation of 2.0 W at 25°C ambient temperature. It features a DC current gain (hFE) of 100 to 400 at -2 V collector-emitter voltage and -1.0 A collector current, with a collector saturation voltage of ≤0.3 V at -3 A collector current and -0.15 A base current. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C. The part is classified as "Standard" quality and meets RoHS requirements.
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The 2SA1741 is a PNP silicon epitaxial power transistor designed for high-speed switching applications such as DC/DC converters and actuators. It is packaged in a small resin-molded insulation type that eliminates the need for an insulating board or bushing during mounting. The device has a collector-to-emitter voltage rating of -60 V, a collector current rating of -5.0 A (DC) and -10 A (pulse), and a total power dissipation of 2.0 W at 25°C ambient temperature. It features a DC current gain (hFE) of 100 to 400 at -2 V collector-emitter voltage and -1.0 A collector current, with a collector saturation voltage of ≤0.3 V at -3 A collector current and -0.15 A base current. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C. The part is classified as "Standard" quality and meets RoHS requirements.
