Rectron Semiconductor Inc. MOSFET RMP8N70TI

RMP8N70TI is an N-channel enhancement mode MOSFET in a TO-220F package, designed for high-efficiency switching mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching, improved ESD and dv/dt capability, and 100% avalanche energy testing. The device has a drain-source voltage rating of 700 V, a continuous drain current of 8 A, and a drain-source on-resistance of 1.2 Ω at 10 V gate-source voltage. It is tested for thermal resistance of 62.5 °C/W from junction to ambient. The part meets the requirements of 100% avalanche energy testing and is rated for a maximum junction temperature of 150 °C.