Rectron Semiconductor Inc. MOSFET RMP2N60LD-T

RMP2N60LD-T is an N-channel enhancement mode MOSFET in a TO-252 package, designed for high-efficiency switching applications such as switch-mode power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, fast switching, improved ESD and dv/dt capability, and 100% avalanche energy testing. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 2 A at 25°C, and a drain-source on-resistance of 5.2 Ω at 10 V gate-source voltage. It meets AEC-Q200 qualifications and is RoHS compliant.