Rectron Semiconductor Inc. MOSFET RMP2N60IP

The RMP2N60IP is an N-channel enhancement mode MOSFET in a TO-251 package, designed for high-efficiency switching applications such as switch-mode power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching, improved ESD and dv/dt capability, and undergoes 100% avalanche energy testing. The device is rated for a drain-source voltage of 600 V and a continuous drain current of 2 A at 25°C. It meets RoHS standards and is built using a self-aligned planar process with improved terminal technology to reduce conduction loss.