Rectron Semiconductor Inc. MOSFET RM90N40DF

The RM90N40DF is an N-channel enhancement mode power MOSFET designed for load switching and high-frequency circuits. It is packaged in a DFN5X6-8L case and supports a drain-source voltage of 40 V with a continuous drain current of 90 A at 25°C. The on-state resistance is 4.0 mΩ at 10 V gate-source voltage and 7.0 mΩ at 4.5 V gate-source voltage. The device has a thermal resistance from junction to case of 2.3°C/W and a maximum power dissipation of 65 W. It is characterized for avalanche energy and features an operating junction and storage temperature range of -55°C to 175°C.