Rectron Semiconductor Inc. MOSFET RM4N700IP

The RM4N700IP is an N-channel super junction power MOSFET in a TO-251 package, designed for AC-DC SMPS applications including PFC and UPS systems. It has a drain-source voltage rating of 700 V, a continuous drain current of 4 A at 25°C, and a typical on-resistance of 1200 mΩ at 10 V gate voltage. The device features a low gate charge of 6.5 to 10 nC, single pulse avalanche energy of 130 mJ, and operates with a junction and storage temperature range of -55°C to +150°C. Thermal resistance from junction to case is 2.7 °C/W. The part is RoHS compliant and 100% avalanche tested. Physical dimensions are defined by the TO-251 package: 6.35 mm to 6.65 mm in body length and 5.40 mm to 5.70 mm in width.