The RM4N650TI is an N-channel super junction MOSFET in a TO-220F package, rated for 650 V drain-source voltage and 4 A continuous drain current at 25°C case temperature. It has a maximum on-resistance of 1200 mΩ at 10 V gate-source voltage and a total gate charge of up to 10 nC. The device is 100% avalanche tested with a single pulse avalanche energy rating of 130 mJ and operates over a junction temperature range of -55°C to +150°C. It is ROHS compliant and designed for AC-DC power factor correction, switched mode power supplies, and uninterruptible power supply applications.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM4N650TI |
| Product Name | MOSFET |
