Rectron Semiconductor Inc. MOSFET RM30N100LD-T

The RM30N100LD is an N-channel enhancement mode power MOSFET designed for power switching and high-frequency applications. It is packaged in a TO-252-2L case with dimensions of 6.50 to 6.70 mm in length, 6.00 to 6.20 mm in width, and 9.80 to 10.40 mm in lead length. The device has a drain-source voltage rating of 100 V, a continuous drain current of 30 A at 25°C, and a maximum power dissipation of 85 W. Its on-state resistance is 40 mΩ typical at 10 V gate-source voltage and 50 mΩ typical at 5 V gate-source voltage. The MOSFET is AEC-Q101 qualified, has a single-pulse avalanche energy rating of 256 mJ, and operates from -55°C to 175°C. It is halogen-free and features a low gate charge of 39 nC.