Rectron Semiconductor Inc. MOSFET RM2N650IP

The RM2N650IP is an N-channel super junction power MOSFET in a TO-251 package, designed for AC-DC switch-mode power supplies, power factor correction, and industrial power applications. It has a drain-source voltage rating of 650 V and a continuous drain current of 2 A at 25°C case temperature. The device features a typical on-resistance of 2.2 Ω, a total gate charge of 10 nC, and is 100% avalanche tested with a single pulse avalanche energy of 45 mJ. It has a junction temperature range of -55°C to +150°C, a thermal resistance junction-to-case of 5.4 °C/W, and is RoHS compliant. The package dimensions are defined with a body length of 9.8 to 10.4 mm and a width of 6.0 to 6.2 mm.