Rectron Semiconductor Inc. MOSFET RM25N30DN

The RM25N30DN is an N-channel enhancement mode power MOSFET designed for switch-mode power supplies and high-frequency circuits. It is packaged in a DFN 3x3 EP package with an exposed thermal pad for improved heat dissipation. The device has a drain-source voltage rating of 30 V, a continuous drain current of 25 A at 25°C (17 A at 100°C), and a pulsed drain current of 50 A. Its on-state resistance is less than 10 mΩ at V_GS = 10 V and less than 14 mΩ at V_GS = 4.5 V. It features a single-pulse avalanche energy rating of 70 mJ and an operating junction and storage temperature range of -55°C to 150°C. Thermal resistance from junction to case is 5°C/W. The device is 100% UIS tested and meets standard MOSFET application requirements for hard-switched and UPS circuits.