Rectron Semiconductor Inc. MOSFET RM2305

The RM2305 is a P-channel enhancement mode power MOSFET designed for load switching and PWM applications. It is housed in a SOT-23 package with dimensions of 2.80 to 3.00 mm in length, 1.20 to 1.40 mm in width, and 0.90 to 1.15 mm in height. The device has a drain-source voltage rating of -20 V, a continuous drain current of -3 A at 25^ ext{C} ambient, and a maximum power dissipation of 1.7 W. It features a gate-source threshold voltage range of -0.45 V to -1.0 V, a drain-source on-state resistance of 52 mΩ at -4.5 V gate voltage, and a total gate charge of 7.8 nC. The part meets AEC-Q101 qualification when designated with a V suffix. It is halogen-free and lead-free.