The RM12N650IP is an N-channel super junction MOSFET in a TO-251 package, designed for AC-DC SMPS applications such as power factor correction and uninterruptible power supplies. It has a drain-source voltage rating of 650 V, a continuous drain current of 7 A at 100°C, and a typical on-resistance of 290 mΩ. The device features ultra-low gate charge, is 100% avalanche tested with single pulse avalanche energy of 144 mJ, and is RoHS compliant. Maximum power dissipation is 101 W at 25°C, derating at 0.97 W/°C above 25°C.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM12N650IP-T |
| Product Name | MOSFET |
