Rectron Semiconductor Inc. MOSFET RM120N85T2

The RM120N85T2 is an N-channel Super Trench MOSFET designed for high-frequency switching and synchronous rectification. It is packaged in a TO-220-3L case with dimensions of 10.25 mm maximum length, 9.75 mm maximum width, and 8.1 mm maximum height. The device has an 85 V drain-source breakdown voltage, continuous drain current of 120 A at 25°C, and a maximum on-resistance of 5.3 mΩ at 10 V gate-source voltage. It operates at junction temperatures up to 175°C and is 100% UIS tested. The package has Pb-free lead plating and meets the AEC-Q200 standard.