Rectron Semiconductor Inc. MOSFET RM120N40T2

The RM120N40T2 is an N-channel enhancement mode power MOSFET in a TO-220-3L package, rated for 40 V drain-source voltage and 120 A continuous drain current. It features a drain-source on-state resistance of 4.0 mΩ maximum at 10 V gate-source voltage and 7.0 mΩ maximum at 4.5 V gate-source voltage. The device supports a maximum power dissipation of 130 W and has a thermal resistance junction-to-case of 1.15 °C/W. It is fully characterized for avalanche energy up to 1080 mJ and is 100% UIS tested. The operating junction and storage temperature range is -55 °C to 175 °C. The package dimensions conform to standard TO-220-3L specifications with a pin pitch of 2.54 mm.