The RM11N800T2 is a silicon N-channel MOSFET in a TO-220 package designed for high-voltage switching applications. It has a drain-source breakdown voltage of 800 V, a continuous drain current of 11 A at 25°C, and a gate-source threshold voltage range of 2.0 to 4.0 V. The device supports a maximum power dissipation of 166 W with proper heat sinking and is rated for operation from -55°C to 150°C. It is halogen-free and RoHS compliant. The part features a low on-resistance of 0.8 Ω maximum at V_GS = 10 V and I_D = 5.5 A.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM11N800T2 |
| Product Name | MOSFET |
