Rectron Semiconductor Inc. MOSFET RM110N150HD-T

The RM110N150HD is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification. It is packaged in a TO-263-2L case measuring 10.01 to 10.31 mm in length and 8.50 to 8.90 mm in width. The device has a drain-source voltage rating of 150 V and can handle a continuous drain current of 113 A at 25°C. Its on-state resistance is less than 8.8 mΩ at VGS=10 V, and it supports an operating junction temperature up to 175°C. The part is AEC-Q101 qualified, halogen-free, and features Pb-free lead plating. It has been 100% UIS tested and meets RoHS standards.