Rectron Semiconductor Inc. Bipolar Transistors - BJT MPSA06-T

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Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur
Description
Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur
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The MPSA06-T is an NPN bipolar junction transistor in a TO-92 package, mounted with a 4.32 to 5.33 mm body length and 4.45 to 5.20 mm width. It has a collector-emitter voltage rating of 80 V, a collector current of 500 mA, and a power dissipation of 625 mW. The device has a minimum DC current gain (hFE) of 100 at 10 mA and 100 mA collector current, with a collector-emitter saturation voltage of 0.25 V at 100 mA collector and 10 mA base current. Its transition frequency is 100 MHz. The emitter-base voltage is 4 V, and the junction-to-ambient thermal resistance is 200 °C/W.

Datasheet Summary
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The MPSA06-T is an NPN bipolar junction transistor in a TO-92 package, mounted with a 4.32 to 5.33 mm body length and 4.45 to 5.20 mm width. It has a collector-emitter voltage rating of 80 V, a collector current of 500 mA, and a power dissipation of 625 mW. The device has a minimum DC current gain (hFE) of 100 at 10 mA and 100 mA collector current, with a collector-emitter saturation voltage of 0.25 V at 100 mA collector and 10 mA base current. Its transition frequency is 100 MHz. The emitter-base voltage is 4 V, and the junction-to-ambient thermal resistance is 200 °C/W.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPSA06-T
Bipolar Transistors - BJT MPSA06-T
Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur

Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPSA06-T
Product Name Bipolar Transistors - BJT
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