Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBTA06-T

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Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur
Description
Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur
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NPN bipolar junction transistor in SOT-23 package with a collector-emitter voltage rating of 80 V, collector current of 0.5 A, and power dissipation of 0.25 W. Current gain (hFE) ranges from 100 to 1000 at a collector current of 1 mA and collector-emitter voltage of 10 V. Collector-base voltage is 80 V, emitter-base voltage is 4 V, and saturation voltage is 0.25 V at 1 mA base current. Maximum junction temperature is not specified.

Datasheet Summary
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NPN bipolar junction transistor in SOT-23 package with a collector-emitter voltage rating of 80 V, collector current of 0.5 A, and power dissipation of 0.25 W. Current gain (hFE) ranges from 100 to 1000 at a collector current of 1 mA and collector-emitter voltage of 10 V. Collector-base voltage is 80 V, emitter-base voltage is 4 V, and saturation voltage is 0.25 V at 1 mA base current. Maximum junction temperature is not specified.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBTA06-T
Bipolar Transistors - BJT CMBTA06-T
Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur

Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBTA06-T
Product Name Bipolar Transistors - BJT
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