Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBT5401

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Bipolar Transistors - BJT PNP,0.5A,150V HighVolt
Description
Bipolar Transistors - BJT PNP,0.5A,150V HighVolt
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PNP bipolar junction transistor in a SOT-23 package, rated for a collector-emitter voltage of 160 V, collector current of 0.5 A, and power dissipation of 0.25 W. It has a dc current gain (hFE) range of 120 to 240 at a collector current of 10 mA and a collector-emitter saturation voltage of 0.20 V at 10 mA base current and 150 mA collector current. The transition frequency is 300 MHz at 10 mA collector current.

Datasheet Summary
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PNP bipolar junction transistor in a SOT-23 package, rated for a collector-emitter voltage of 160 V, collector current of 0.5 A, and power dissipation of 0.25 W. It has a dc current gain (hFE) range of 120 to 240 at a collector current of 10 mA and a collector-emitter saturation voltage of 0.20 V at 10 mA base current and 150 mA collector current. The transition frequency is 300 MHz at 10 mA collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBT5401
Bipolar Transistors - BJT CMBT5401
Bipolar Transistors - BJT PNP,0.5A,150V HighVolt

Bipolar Transistors - BJT PNP,0.5A,150V HighVolt

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBT5401
Product Name Bipolar Transistors - BJT
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