NPN silicon planar epitaxial transistor in a SOT-23 package with a maximum collector-emitter voltage of 40 V, collector current of 600 mA, and power dissipation of 250 mW at 25°C. D.C. current gain ranges from 100 to 300 at IC = 150 mA and VCE = 10 V. Transition frequency exceeds 300 MHz at IC = 20 mA and VCE = 20 V. Operating junction temperature ranges from -55°C to 150°C. Thermal resistance from junction to ambient is 500 K/W.
Bipolar Transistors - BJT NPN,0.6A,40V GenPur
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CMBT2222A |
| Product Name | Bipolar Transistors - BJT |
