Rectron Semiconductor Inc. Bipolar Transistors - BJT BC856A-T

BC856A-T is a PNP silicon planar epitaxial transistor in a compact package, designed for general-purpose amplification and switching. It shares the same pinout and packaging as the BC856 series, with a maximum collector current of 100 mA and peak currents up to 200 mA. The device supports a collector-emitter voltage of 65 V and a collector-base voltage of 80 V. Total power dissipation is rated at 250 mW when mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. Electrical characteristics include a DC current gain (hFE) between 125 and 250 at IC = 2 mA and VCE = 5 V, a collector-emitter saturation voltage of 0.30 V at IC = 10 mA and IB = 0.5 mA, and a transition frequency of 100 MHz. The junction temperature range is -55 °C to +150 °C.