NPN silicon planar epitaxial transistors in SOT-23 SMD package, rated for a collector-emitter voltage of 45 V, collector current of 100 mA, and power dissipation of 250 mW at 25°C. Junction temperature ranges from -55°C to 150°C. DC current gain (hFE) ranges from 110 to 800 depending on binning, with a transition frequency of 100 MHz. Meets no specified industry standards.
Bipolar Transistors - BJT Gen Pur Trans NPN,0.1A,45V
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC847-T |
| Product Name | Bipolar Transistors - BJT |
