Qorvo 400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor QPD2195

Description
The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2195 can deliver P3dB of 400 W at +48 V operation. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
  • 400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor - QPD2195 - Qorvo
    Qorvo
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Description
The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2195 can deliver P3dB of 400 W at +48 V operation. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor - QPD2195 - Qorvo
Qorvo
Greensboro, NC, United States
400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor
QPD2195
400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor QPD2195
The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2195 can deliver P3dB of 400 W at +48 V operation. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.

The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD2195 can deliver P3dB of 400 W at +48 V operation.

Lead-free and ROHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD2195
Product Name 400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor
Transistor Technology / Material GaN
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