Qorvo 300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor QPD2194

Description
The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2194 can deliver PSAT of 371 W at +48 V operation. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
  • 300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor - QPD2194 - Qorvo
    Qorvo
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Description
The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2194 can deliver PSAT of 371 W at +48 V operation. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor - QPD2194 - Qorvo
Qorvo
Greensboro, NC, United States
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
QPD2194
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor QPD2194
The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2194 can deliver PSAT of 371 W at +48 V operation. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.

The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD2194 can deliver PSAT of 371 W at +48 V operation.

Lead-free and ROHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD2194
Product Name 300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
Transistor Technology / Material GaN
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