Qorvo 1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor QPD1823

Description
Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD1823 can deliver PSAT of 227 W at 48 V operation. Lead-free and ROHS compliant.
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Description
Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD1823 can deliver PSAT of 227 W at 48 V operation. Lead-free and ROHS compliant.
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1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor - QPD1823 - Qorvo
Greensboro, NC, United States
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
QPD1823
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor QPD1823
Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD1823 can deliver PSAT of 227 W at 48 V operation. Lead-free and ROHS compliant.

Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor.

The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD1823 can deliver PSAT of 227 W at 48 V operation.

Lead-free and ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD1823
Product Name 1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
Transistor Technology / Material GaN
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