Qorvo 1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor QPD2560L

Description
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
  • 1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor - QPD2560L - Qorvo
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Description
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
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1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor - QPD2560L - Qorvo
Qorvo
Greensboro, NC, United States
1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor
QPD2560L
1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor QPD2560L
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.

The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.

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Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPD2560L
Product Name 1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor
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