Qorvo 30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor QPD1020

Description
The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
  • 30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor - QPD1020 - Qorvo
    Qorvo
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Description
The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
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30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor - QPD1020 - Qorvo
Qorvo
Greensboro, NC, United States
30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor
QPD1020
30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor QPD1020
The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD1020
Product Name 30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor
Transistor Technology / Material GaN
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