pSemi RF and Microwave Switch PE423211A-Z

Description
The PE423211 is a HaRP technology-enhanced reflective 50 Ohm SPDT RF switch designed for use in high performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth and UWB applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 x 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance. The PE423211 is manufactured on pSemi’s UltraCMOS process, a patented silicon-on-insulator (SOI) technology.
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Description
The PE423211 is a HaRP technology-enhanced reflective 50 Ohm SPDT RF switch designed for use in high performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth and UWB applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 x 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance. The PE423211 is manufactured on pSemi’s UltraCMOS process, a patented silicon-on-insulator (SOI) technology.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - PE423211A-Z - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
PE423211A-Z
RF and Microwave Switch PE423211A-Z
The PE423211 is a HaRP technology-enhanced reflective 50 Ohm SPDT RF switch designed for use in high performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth and UWB applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 x 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance. The PE423211 is manufactured on pSemi’s UltraCMOS process, a patented silicon-on-insulator (SOI) technology.

The PE423211 is a HaRP technology-enhanced reflective 50 Ohm SPDT RF switch designed for use in high performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth and UWB applications supporting bandwidths up to 10.6 GHz.

This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 x 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance.

The PE423211 is manufactured on pSemi’s UltraCMOS process, a patented silicon-on-insulator (SOI) technology.

Supplier's Site Datasheet
RF Switches - 1046-PE423211A-ZTR-ND - DigiKey
Thief River Falls, MN, United States
AEC-Q100 CERTIFIED SPDT, LOW IL,

AEC-Q100 CERTIFIED SPDT, LOW IL,

Buy Now Datasheet
RF Switches - 1046-PE423211A-ZCT-ND - DigiKey
Thief River Falls, MN, United States
AEC-Q100 CERTIFIED SPDT, LOW IL,

AEC-Q100 CERTIFIED SPDT, LOW IL,

Buy Now Datasheet
RF Switches - 1046-PE423211A-ZDKR-ND - DigiKey
Thief River Falls, MN, United States
AEC-Q100 CERTIFIED SPDT, LOW IL,

AEC-Q100 CERTIFIED SPDT, LOW IL,

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category RF Switches RF Switches
Product Number PE423211A-Z 1046-PE423211A-ZTR-ND
Product Name RF and Microwave Switch RF Switches
Package Type DFN Surface Mount; 6-UFDFN Exposed Pad
Frequency Range 300 to 10600 MHz 300 to 10600 MHz
Insertion Loss 0.6000 dB 0.6000 dB
Isolation 18 dB 15 dB
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