The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging.
Features
High- and Low-side FET drivers
Dead-time control
Fast propagation delay, 11ns
Internal gate overvoltage management
Sub-nanosecond rise and fall time
2A/4A peak source/sink current
Package – Flip chip
Applications
DC–DC conversions
AC–DC conversions
Wireless power
LiDAR
The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging.
Features
- High- and Low-side FET drivers
- Dead-time control
- Fast propagation delay, 11ns
- Internal gate overvoltage management
- Sub-nanosecond rise and fall time
- 2A/4A peak source/sink current
- Package – Flip chip
Applications
- DC–DC conversions
- AC–DC conversions
- Wireless power
- LiDAR
