Prisemi Electronics Semiconductor Power Modules PESDUC2FD5VB

Description
5.5A 21V 5.6V Bidirectional 5V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - PESDUC2FD5VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
5.5A 21V 5.6V Bidirectional 5V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - PESDUC2FD5VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
PESDUC2FD5VB
Semiconductor Power Modules PESDUC2FD5VB
5.5A 21V 5.6V Bidirectional 5V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

5.5A 21V 5.6V Bidirectional 5V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number PESDUC2FD5VB
Product Name Semiconductor Power Modules
Technology Rectifier
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules PIM - 6th-Gen V Series Model: 7MBR25VP120-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules PIM
6th-Gen V Series Model: 7MBR25VP120-50
Specs
Technology IGBT
Package M719
Output Voltage 1200 volts
View Details
Intelligent Power Modules (IPM) - IM241-L6S1B - Infineon Technologies AG
Infineon Technologies AG
Intelligent Power Modules (IPM)
IM241-L6S1B
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package SOP 29x12
View Details
flow MNPC 1 Power Module - 10-PY12NMA160SH09-M820F98Y - Vincotech GmbH
Vincotech GmbH
flow MNPC 1 Power Module
10-PY12NMA160SH09-M820F98Y
Specs
Technology IGBT; IGBT4 HS
Configuration Three-level MNPC (T-Type)
Output Voltage 1200 volts
View Details
1200V Punch-Thru IGBT - IGBT-PT-1200V - Microchip Technology, Inc.
Microchip Technology, Inc.
1200V Punch-Thru IGBT
IGBT-PT-1200V
Specs
Technology IGBT
View Details