PANJIT SemiConductor FET, MOSFET Arrays PJS6835_S2_00001

P-Channel MOSFET designed for load switching and PWM applications, rated for -20 V drain-source voltage and -500 mA continuous drain current, packaged in SOT-23 6L. It features ESD protection, a low 1.2 V gate drive, and complies with RoHS 2.0 and IEC 61249. The device has a maximum power dissipation of 500 mW at 25°C, a junction-to-ambient thermal resistance of 250 °C/W, and operates from -55°C to 150°C. The part is lead-free and uses green molding compound.