PANJIT SemiConductor FET, MOSFET Arrays PJS6815_S1_00001

PJS6815 is a P-channel enhancement mode MOSFET designed for switch load and PWM applications, housed in an SOT-23 6L package measuring approximately 0.014 grams. It ratings include a drain-source voltage of -20 V, a continuous drain current of -3.6 A, and a power dissipation of 1.25 W at 25°C. On-state resistance is less than 57 mΩ at VGS=-4.5V and ID=-3.6A, and less than 95 mΩ at VGS=-1.8V and ID=-2.1A. The device complies with RoHS 2.0 and IEC 61249 standards for lead-free and green molding compound. Junction and storage temperatures range from -55°C to 150°C. Thermal resistance from junction to ambient is 100°C/W. The part is not rated for life-sustaining or high-reliability applications.