PANJIT SemiConductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single PJQ5472A_R2_00001

Description
Win Source Part Number: 1085306-PJQ5472A_R2_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 41W (Tc) Package / Case: 8-PowerVDFN Supplier Device Package: DFN5060-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJQ5472A_R2_000 01TR,3757-PJQ5472A_R 2_00001CT,3757-PJQ54 72A_R2_00001DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1085306-PJQ5472A_R2_00001 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 3757-PJQ5472A_R2_00001TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PJQ5472A_R2_00001 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1085306-PJQ5472A_R2_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 41W (Tc) Package / Case: 8-PowerVDFN Supplier Device Package: DFN5060-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJQ5472A_R2_000 01TR,3757-PJQ5472A_R 2_00001CT,3757-PJQ54 72A_R2_00001DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1085306-PJQ5472A_R2_00001 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1085306-PJQ5472A_R2_00001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1085306-PJQ5472A_R2_00001
Win Source Part Number: 1085306-PJQ5472A_R2_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 41W (Tc) Package / Case: 8-PowerVDFN Supplier Device Package: DFN5060-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJQ5472A_R2_000 01TR,3757-PJQ5472A_R 2_00001CT,3757-PJQ54 72A_R2_00001DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1085306-PJQ5472A_R2_00001
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Package / Case: 8-PowerVDFN
Supplier Device Package: DFN5060-8
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Panjit International Inc.
Other Names: 3757-PJQ5472A_R2_00001TR,3757-PJQ5472A_R2_00001CT,3757-PJQ5472A_R2_00001DKR
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now
Single FETs, MOSFETs - 3757-PJQ5472A_R2_00001TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3757-PJQ5472A_R2_00001TR-ND
Single FETs, MOSFETs 3757-PJQ5472A_R2_00001TR-ND
N-Channel 100V 2.9A (Ta), 13A (Tc) 2W (Ta), 41W (Tc) Surface Mount DFN5060-8

N-Channel 100V 2.9A (Ta), 13A (Tc) 2W (Ta), 41W (Tc) Surface Mount DFN5060-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PJQ5472A_R2_00001 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PJQ5472A_R2_00001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PJQ5472A_R2_00001
100V N-CHANNEL ENHANCEMENT MODE

100V N-CHANNEL ENHANCEMENT MODE

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Transistors Transistors RF Transistors
Product Number 1085306-PJQ5472A_R2_00001 3757-PJQ5472A_R2_00001TR-ND PJQ5472A_R2_00001
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data