PANJIT SemiConductor Single FETs, MOSFETs PJMB130N65EC_R2_00601

650V N-channel super junction MOSFET in a TO-263 package, rated for a continuous drain current of 29 A at 25°C and 17.7 A at 100°C, with a maximum on-state resistance of 130 mΩ at 10 V gate voltage. The device has a gate charge of 51 nC, a single pulse avalanche energy of 640 mJ, and operates within a junction and storage temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.53°C/W. Fully avalanche tested and RoHS 2.0 compliant.