PANJIT SemiConductor Single FETs, MOSFETs PJD12P06_L2_00001

P-Channel 60V MOSFET in TO-252AA package for surface mount applications, rated for continuous drain current of 12A at 25°C and 7.7A at 100°C, with a maximum drain-source on-state resistance of 155mΩ at -10V gate bias and -6A drain current. It features a pulsed drain current capability of 48A, a single pulse avalanche energy rating of 337mJ, and operates within a junction and storage temperature range of -55°C to 150°C. The device meets RoHS 2.0 and IEC 61249 standards for green materials, and is supplied in a 3,000-piece 13-inch reel. Thermal resistance from junction to case is 2.5°C/W and junction to ambient is 62.5°C/W when mounted on a 1 in² copper pad with 2oz copper.