PANJIT SemiConductor Single Bipolar Transistors PBSS4232DD_L2_00001

NPN silicon epitaxial transistor for surface mount applications, rated for 32 V collector-emitter voltage and 2 A continuous collector current, with a maximum power dissipation of 2.0 W. Housed in a TO-252AA package measuring 6.73 mm by 6.35 mm, it features a collector-emitter saturation voltage of up to 800 mV at 2 A collector current and 200 mA base current, and a transition frequency of 270 MHz. Thermal resistance from junction to ambient is 62.5 °C/W when mounted on an FR4 PCB with 2 oz copper. The part is lead-free, complies with RoHS 2.0, and uses green molding compound per IEC 61249. Terminals are solderable per MIL-STD-750, Method 2026. Operating and storage temperature range is -55 °C to 150 °C.