PANJIT SemiConductor Single Bipolar Transistors MMBT3904FN3_R1_00501

The MMBT3904FN3 is an NPN silicon switching transistor in a DFN1006-3L package measuring 1.0 mm by 0.6 mm. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 200 mA, and a maximum power dissipation of 250 mW. The junction temperature ranges from -55°C to 150°C, with a thermal resistance of 500 °C/W. Current gain (hFE) varies from 30 to 300 depending on collector current, and collector-emitter saturation voltage is up to 0.85 V at 10 mA collector current. The device is lead-free and complies with EU RoHS 2.0 and IEC 61249 green standards.