Panasonic TRANSISTORS - Transistors - FETs, MOSFETs - RF - XN0NE9200L XN0NE9200L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036639-XN0NE9200L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 600mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: Mini5-G1 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.2A (Ta) Gate-Source Threshold Voltage: 1.3V @ 1mA Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 450 mOhm @ 800mA, 4V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036639-XN0NE9200L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 600mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: Mini5-G1 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.2A (Ta) Gate-Source Threshold Voltage: 1.3V @ 1mA Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 450 mOhm @ 800mA, 4V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XN0NE9200L - 036639-XN0NE9200L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XN0NE9200L
036639-XN0NE9200L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XN0NE9200L 036639-XN0NE9200L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036639-XN0NE9200L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 600mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: Mini5-G1 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.2A (Ta) Gate-Source Threshold Voltage: 1.3V @ 1mA Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 450 mOhm @ 800mA, 4V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036639-XN0NE9200L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 600mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V
Status: Obsolete(EOL)
Temperature Range - Operating: 125°C (TJ)
Case / Package: Mini5-G1
Dimension: SC-74A, SOT-753
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 1mA
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 450 mOhm @ 800mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - XN0NE9200LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
XN0NE9200LTR-ND
Single FETs, MOSFETs XN0NE9200LTR-ND
P-Channel 12V 1.2A (Ta) 600mW (Ta) Surface Mount Mini5-G1

P-Channel 12V 1.2A (Ta) 600mW (Ta) Surface Mount Mini5-G1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - XN0NE9200L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
XN0NE9200L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs XN0NE9200L
MOSFET P-CH 12V 1.2A MINI5-G1

MOSFET P-CH 12V 1.2A MINI5-G1

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 036639-XN0NE9200L XN0NE9200LTR-ND XN0NE9200L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - XN0NE9200L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts
PD 600 milliwatts
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