Panasonic TRANSISTORS - Transistors - FETs, MOSFETs - RF - XN0NE9200L XN0NE9200L

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036639-XN0NE9200L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 600mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V
Status: Obsolete(EOL)
Temperature Range - Operating: 125°C (TJ)
Case / Package: Mini5-G1
Dimension: SC-74A, SOT-753
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 1mA
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 450 mOhm @ 800mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

MOSFET P-CH 12V 1.2A MINI5-G1 Product overview: XN0NE9200L from Panasonic is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-XN0NE9200L can be used for catalog matching and distributor lookup.