Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR92A1G0L UNR92A1G0L

The UNR92A1G is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It is packaged in the SSMini3-F3 surface-mount case, measuring 1.60 mm × 1.00 mm with a height of 0.50 mm. The device has a collector-base voltage rating of 50 V, collector-emitter voltage rating of 50 V, and maximum collector current of 80 mA. Total power dissipation is 125 mW, with a junction temperature range of -55°C to +125°C. It complies with the RoHS Directive. Transition frequency is 150 MHz, and collector-emitter saturation voltage is 0.25 V at I_C = 10 mA and I_B = 0.3 mA. Input resistance is 10 kΩ with a tolerance of ±30%. The part is rated for high-density mounting and low power consumption.