Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A6G0L UNR51A6G0L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116452-UNR51A6G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-F2 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116452-UNR51A6G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-F2 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A6G0L - 1116452-UNR51A6G0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A6G0L
1116452-UNR51A6G0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A6G0L 1116452-UNR51A6G0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116452-UNR51A6G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-F2 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1116452-UNR51A6G0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMini3-F2
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1116452-UNR51A6G0L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A6G0L
Polarity PNP; PNP - Pre-Biased
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1826913 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type U-dfn2020
View Details
CSD17556Q5B 30V N-Channel NexFET Power MOSFETs - CSD17556Q5BT - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
4 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-25W-QX - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type SC-70
View Details
3 suppliers