Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR222600L UNR222600L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116441-UNR222600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116441-UNR222600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR222600L - 1116441-UNR222600L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR222600L
1116441-UNR222600L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR222600L 1116441-UNR222600L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116441-UNR222600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1116441-UNR222600L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: Mini3-G1
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 80mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR222600L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR222600L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR222600L
TRANS PREBIAS NPN 20V 0.6A MINI3

TRANS PREBIAS NPN 20V 0.6A MINI3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1116441-UNR222600L UNR222600L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR222600L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased
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