Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221K00L UNR221K00L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116423-UNR221K00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116423-UNR221K00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221K00L - 1116423-UNR221K00L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221K00L
1116423-UNR221K00L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221K00L 1116423-UNR221K00L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116423-UNR221K00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1116423-UNR221K00L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: Mini3-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 20 @ 5mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR221K00L - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR221K00L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR221K00L
TRANS PREBIAS NPN 50V 0.1A MINI3

TRANS PREBIAS NPN 50V 0.1A MINI3

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1116423-UNR221K00L UNR221K00L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221K00L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased
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